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A practical route towards fabricating GaN nanowire arrays
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H; Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
2011
Source PublicationCRYSTENGCOMM
ISSN1466-8033
Volume13Issue:19Pages:5929-5935
AbstractGaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially etching away the defective parts of GaN with dislocations and retaining the flawless parts. The NWs have a density of 1 similar to 2 x 10(7) cm(-2), diameters ranging from 150 nm to 500 nm, and corresponding lengths ranging from 10 mu m to 20 mu m. Transmission electron microscopy (TEM) indicates that these GaN NWs possess few dislocations. High resolution X-ray diffraction (HRXRD) and micro-Raman measurements show that these GaN NWs are stress-free. Room temperature cathodoluminescence (CL) measurements show a single near-band-edge emission at 367 nm with a full width at half maximum (FWHM) of 8 nm from the NWs, indicating a high optical quality. Additionally, negative piezoelectric current pluses are generated from the GaN NWs when the conductive atomic force microscope is scanned cross the arrays in contact mode. Such GaN NW arrays are promising building blocks for exploring nanodevices with excellent performance.
metadata_83集成光电子学国家重点实验室
KeywordLight-emitting-diodes Epitaxial Lateral Overgrowth Chemical-vapor-deposition Well Nanorod Arrays Ultraviolet-light Growth Nanogenerators Dislocations Brightness Layers
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China[60776003, 10704052, 50902101, 50902099, 10904106]; National Basic Research Program of China (973 program)[2007CB936700]; Chinese Academy of Sciences[YZ200939]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22827
Collection集成光电子学国家重点实验室
Corresponding AuthorXu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
Recommended Citation
GB/T 7714
Liu, JQ,Huang, J,Gong, XJ,et al. A practical route towards fabricating GaN nanowire arrays[J]. CRYSTENGCOMM,2011,13(19):5929-5935.
APA Liu, JQ.,Huang, J.,Gong, XJ.,Wang, JF.,Xu, K.,...&Xu, K .(2011).A practical route towards fabricating GaN nanowire arrays.CRYSTENGCOMM,13(19),5929-5935.
MLA Liu, JQ,et al."A practical route towards fabricating GaN nanowire arrays".CRYSTENGCOMM 13.19(2011):5929-5935.
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