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Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM; Zhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:24Pages:241111
AbstractOur simulated results [Appl. Phys. Lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (LEDs) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. In this letter, in order to verify these calculated results, polarization-doped LEDs grown by metalorganic chemical vapor deposition are investigated. The results show that the polarization-doped LED has the improved electroluminescence intensity and external quantum efficiency (EQE) compared with the conventional LED. The influence of the degree of AlGaN gradation on polarization-doped LEDs is also studied. It is found that the polarization-doped LED has the highest EQE when the Al composition of the graded AlGaN is linearly decreased from 0.2 to 0. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601469]
metadata_83中科院半导体照明研发中心
KeywordAlgan/gan Heterostructures Transport-properties
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22815
Collection中科院半导体照明研发中心
Corresponding AuthorZhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang, L,Wei, XC,Liu, NX,et al. Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition[J]. APPLIED PHYSICS LETTERS,2011,98(24):241111.
APA Zhang, L.,Wei, XC.,Liu, NX.,Lu, HX.,Zeng, JP.,...&Zhang, L .(2011).Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition.APPLIED PHYSICS LETTERS,98(24),241111.
MLA Zhang, L,et al."Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition".APPLIED PHYSICS LETTERS 98.24(2011):241111.
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