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Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition
Gupta, S; Zaidi, T; Melton, A; Malguth, E; Yu, HB; Liu, ZQ; Liu, XT; Schwartz, J; Ferguson, IT; Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume110Issue:8Pages:83920
AbstractThis paper presents the first report on Gd doping (0%-4%) of GaN thin films by metal organic chemical vapor deposition. The Ga(1-x)Gd(x)N films grown in this study were found to be of good crystalline quality, single-phase, and unstrained, with a high saturation magnetization strength of 20 emu/cm(3) being obtained for GaN films doped with 2% Gd at room temperature. Furthermore, these films were found to be conductive with an enhanced n-type behavior suggesting that unintentional donors are responsible for stabilizing the ferromagnetic phase in as-grown Ga(1-x)Gd(x)N. Additionally, it was found that this magnetization can be enhanced by n-(Si: 10(18) cm(-3)) and p-(Mg: 10(19) cm(-3)) doping to 110 emu/cm(3) and similar to 500 emu/cm(3), respectively. This paper shows empirically that holes are more efficient in stabilizing the ferromagnetic phase as compared to electrons. Overall, this research has resulted in a room temperature ferromagnetic dilute magnetic semiconductor that is conductive and whose magnetic properties can be tuned by carrier doping thus providing a path towards realizing spintronic devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656019]
metadata_83中科院半导体照明研发中心
KeywordFerromagnetic Properties Semiconductors Gan Gagdn
Subject Area半导体器件
Funding OrganizationAir Force Office of Scientific Research (AFOSR)
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22813
Collection中科院半导体照明研发中心
Corresponding AuthorFerguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
Recommended Citation
GB/T 7714
Gupta, S,Zaidi, T,Melton, A,et al. Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2011,110(8):83920.
APA Gupta, S.,Zaidi, T.,Melton, A.,Malguth, E.,Yu, HB.,...&Ferguson, IT .(2011).Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,110(8),83920.
MLA Gupta, S,et al."Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 110.8(2011):83920.
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