SEMI OpenIR  > 中科院半导体材料科学重点实验室
The p recombination layer in tunnel junctions for micromorph tandem solar cells
Yao WJ; Zeng XB; Peng WB; Liu SY; Xie XB; Wang C; Liao XB; Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, xbzeng@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1009-1963
Volume20Issue:7Pages:78402
AbstractA new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p(+) recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n-i-p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si: H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Omega.cm(2) by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V(oc) = 1.4 V, which is nearly the sum of the V(oc)s of the two corresponding single cells, indicating no V(oc) losses at the tunnel recombination junction.
metadata_83中科院半导体材料科学重点实验室
KeywordSilicon
Subject Area半导体材料
Funding OrganizationNational Basic Research Program of China[2006CB202604]; Chinese Academy of Sciences[1KGCX2-YW-383-1]; National High Technology Research and Development Program of China[SQ2010AA0521758001]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22807
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, xbzeng@semi.ac.cn
Recommended Citation
GB/T 7714
Yao WJ,Zeng XB,Peng WB,et al. The p recombination layer in tunnel junctions for micromorph tandem solar cells[J]. CHINESE PHYSICS B,2011,20(7):78402.
APA Yao WJ.,Zeng XB.,Peng WB.,Liu SY.,Xie XB.,...&Zeng, XB .(2011).The p recombination layer in tunnel junctions for micromorph tandem solar cells.CHINESE PHYSICS B,20(7),78402.
MLA Yao WJ,et al."The p recombination layer in tunnel junctions for micromorph tandem solar cells".CHINESE PHYSICS B 20.7(2011):78402.
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