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Temperature performance of the edge emitting transistor laser
Liang S; Zhu HL; Kong DH; Niu B; Zhao LJ; Wang W; Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China, liangsong@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:1Pages:13503
AbstractThe characteristic temperature (T(0)) of the edge emitting transistor laser (TL) is studied numerically. For the deep-ridge TL, the common base (CB) mode characteristic temperature (T(0,CB)) is a lot lower than the common emitter (CE) mode characteristic temperature (T(0,CE)), which is comparable to a conventional laser. This is resulted from the increase of the emitter to base current gain with the base current, which amplifies the increase of the CB threshold current with temperature. For the shallow-ridge TL, the T(0,CE) is found to be also rather low and is only slightly higher than the T(0,CB). This can be attributed to the large fraction of electron current in the total base current, which is related to the large thickness of base layer and the insertion of quantum wells in the TL. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3608384]
metadata_83中科院半导体材料科学重点实验室
KeywordHeterostructure Laser Bipolar-transistor Operation Integration
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China[60706009, 61006044, 60736036, 61021003]; National 973 Program[2011CB301702]; National 863 project[2009AA03Z442]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22805
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China, liangsong@semi.ac.cn
Recommended Citation
GB/T 7714
Liang S,Zhu HL,Kong DH,et al. Temperature performance of the edge emitting transistor laser[J]. APPLIED PHYSICS LETTERS,2011,99(1):13503.
APA Liang S.,Zhu HL.,Kong DH.,Niu B.,Zhao LJ.,...&Liang, S .(2011).Temperature performance of the edge emitting transistor laser.APPLIED PHYSICS LETTERS,99(1),13503.
MLA Liang S,et al."Temperature performance of the edge emitting transistor laser".APPLIED PHYSICS LETTERS 99.1(2011):13503.
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