SEMI OpenIR  > 中科院半导体材料科学重点实验室
Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
Liang, DC; An, Q; Jin, P; Li, XK; Wei, H; Wu, J; Wang, ZG; Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:10Pages:108503
AbstractThis paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.
metadata_83中科院半导体材料科学重点实验室
KeywordInalgaas Quantum Dot Superluminescent Diode Optical Coherence Tomography Short Wavelength Optical Coherence Tomography Resolution
Subject Area半导体材料
Funding OrganizationNational Basic Research Program of China[2006CB604904]; National Natural Science Foundation of China[60876086, 60976057, 60776037]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22803
Collection中科院半导体材料科学重点实验室
Corresponding AuthorJin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liang, DC,An, Q,Jin, P,et al. Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes[J]. CHINESE PHYSICS B,2011,20(10):108503.
APA Liang, DC.,An, Q.,Jin, P.,Li, XK.,Wei, H.,...&Jin, P .(2011).Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes.CHINESE PHYSICS B,20(10),108503.
MLA Liang, DC,et al."Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes".CHINESE PHYSICS B 20.10(2011):108503.
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