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Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG; Liu, GP (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, liugp@semi.ac.cn; qszhu@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume110Issue:2Pages:23705
AbstractThe electron mobility limited by spacer layer thickness fluctuation (SLTF) scattering on the two-dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructure is investigated. Although the SLTF scattering and the interface roughness scattering are both induced by the roughness of the AlGaAs/GaAs interface, they are two different scattering mechanisms. The interface roughness will lead to the fluctuation of the distance from the electrons to the ideal interface and the fluctuation of the spacer layer thickness. The former induces the fluctuation of the electron potential, which works as the interface roughness scattering potential. The latter induces the fluctuation of the sheet carrier density in the channel, which causes a fluctuation in the quantization energy level. The quantization energy level fluctuation works as the SLTF scattering potential. Compared with the interface roughness scattering, the results reveal that the SLTF scattering becomes the dominant scattering mechanism when the doping density in the AlGaAs is high enough. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608242]
metadata_83中科院半导体材料科学重点实验室
KeywordField-effect Transistors Interface Roughness Quantum-wells Mobility Heterojunction Transport Model
Subject Area半导体材料
Funding OrganizationNational Science Foundation of China[60776015, 61006004, 61076001, 10979507]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22801
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiu, GP (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, liugp@semi.ac.cn; qszhu@semi.ac.cn
Recommended Citation
GB/T 7714
Liu GP,Wu J,Lu YW,et al. Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures[J]. JOURNAL OF APPLIED PHYSICS,2011,110(2):23705.
APA Liu GP.,Wu J.,Lu YW.,Li ZW.,Song YF.,...&qszhu@semi.ac.cn.(2011).Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures.JOURNAL OF APPLIED PHYSICS,110(2),23705.
MLA Liu GP,et al."Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures".JOURNAL OF APPLIED PHYSICS 110.2(2011):23705.
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