| Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy | |
| Jin, L; Zhou, HY; Qu, SC; Wang, ZG; Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn; qsc@semi.ac.cn | |
| 2011 | |
| Source Publication | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| ISSN | 1369-8001 |
| Volume | 14Issue:2Pages:108-113 |
| Abstract | Ordered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers. Morphology and structure of the patterned GaAs substrate is determined both by the oxygen desorption and the Mn ion diffusion. Suitable patterned GaAs substrates with the same dosage of Mn ions for the following epitaxy can be obtained by controlling the deoxidization As(4) pressures during the oxygen desorption. Images of samples with different Mn ion implantation dosages and different molecular beam epitaxial conditions for the following deposition of InAs nanodots on the patterned GaAs substrates are characterized by atomic force microscopy (AFM). The order of the InAs nanodots is determined both by the AAO membrane and dosage of Mn ions. The density of InAs nanodots has great relation to the pore density of the AAO. (C) 2011 Elsevier Ltd. All rights reserved. |
| metadata_83 | 中科院半导体材料科学重点实验室 |
| Keyword | Patterned Substrate Ion implantatIon Ordered Nanodots Anodic Aluminum Oxide Quantum Dots Islands Growth Semiconductors Nanostructures Computation Ingaas |
| Subject Area | 半导体材料 |
| Funding Organization | National Basic Research Program of China (973 Program)[2010CB933800]; National Natural Science Foundation of China[60736034, 50990064] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-02-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22791 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn; qsc@semi.ac.cn |
| Recommended Citation GB/T 7714 | Jin, L,Zhou, HY,Qu, SC,et al. Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):108-113. |
| APA | Jin, L,Zhou, HY,Qu, SC,Wang, ZG,Jin, L ,&qsc@semi.ac.cn.(2011).Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,14(2),108-113. |
| MLA | Jin, L,et al."Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 14.2(2011):108-113. |
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| Ordered InAs nanodot（861KB） | 限制开放 | -- | Application Full Text | |||
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