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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
Jin, L; Zhou, HY; Qu, SC; Wang, ZG; Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn; qsc@semi.ac.cn
2011
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN1369-8001
Volume14Issue:2Pages:108-113
AbstractOrdered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers. Morphology and structure of the patterned GaAs substrate is determined both by the oxygen desorption and the Mn ion diffusion. Suitable patterned GaAs substrates with the same dosage of Mn ions for the following epitaxy can be obtained by controlling the deoxidization As(4) pressures during the oxygen desorption. Images of samples with different Mn ion implantation dosages and different molecular beam epitaxial conditions for the following deposition of InAs nanodots on the patterned GaAs substrates are characterized by atomic force microscopy (AFM). The order of the InAs nanodots is determined both by the AAO membrane and dosage of Mn ions. The density of InAs nanodots has great relation to the pore density of the AAO. (C) 2011 Elsevier Ltd. All rights reserved.
metadata_83中科院半导体材料科学重点实验室
KeywordPatterned Substrate Ion implantatIon Ordered Nanodots Anodic Aluminum Oxide Quantum Dots Islands Growth Semiconductors Nanostructures Computation Ingaas
Subject Area半导体材料
Funding OrganizationNational Basic Research Program of China (973 Program)[2010CB933800]; National Natural Science Foundation of China[60736034, 50990064]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22791
Collection中科院半导体材料科学重点实验室
Corresponding AuthorJin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn; qsc@semi.ac.cn
Recommended Citation
GB/T 7714
Jin, L,Zhou, HY,Qu, SC,et al. Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):108-113.
APA Jin, L,Zhou, HY,Qu, SC,Wang, ZG,Jin, L ,&qsc@semi.ac.cn.(2011).Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,14(2),108-113.
MLA Jin, L,et al."Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 14.2(2011):108-113.
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