Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model

	Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model
	Wang M; Gu YX; Ji HM; Yang T; Wang ZG; Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
	2011
Source Publication	CHINESE PHYSICS B
ISSN	1009-1963
Volume	20 Issue:7 Pages:77301
Abstract	We investigate the band structure of a compressively strained In(Ga)As/In(0.53)Ga(0.47)As quantum well (QW) on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 mu m, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs/In(0.53)Ga(0.47)As QW with a well width of 4.1 nm emitting at 2.33 mu m by optimizing the strain and the well width.
metadata_83	中科院半导体材料科学重点实验室
Keyword	Epitaxy Movpe
Subject Area	半导体材料
Funding Organization	Chinese Academy of Sciences, China
Indexed By	SCI
Language	英语
Date Available	2012-02-06
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/22789
Collection	中科院半导体材料科学重点实验室
Corresponding Author	Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
Recommended Citation GB/T 7714	Wang M,Gu YX,Ji HM,et al. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model[J]. CHINESE PHYSICS B,2011,20(7):77301.
APA	Wang M,Gu YX,Ji HM,Yang T,Wang ZG,&Yang, T .(2011).Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model.CHINESE PHYSICS B,20(7),77301.
MLA	Wang M,et al."Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model".CHINESE PHYSICS B 20.7(2011):77301.

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