SEMI OpenIR  > 中科院半导体材料科学重点实验室
Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model
Wang M; Gu YX; Ji HM; Yang T; Wang ZG; Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1009-1963
Volume20Issue:7Pages:77301
AbstractWe investigate the band structure of a compressively strained In(Ga)As/In(0.53)Ga(0.47)As quantum well (QW) on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 mu m, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs/In(0.53)Ga(0.47)As QW with a well width of 4.1 nm emitting at 2.33 mu m by optimizing the strain and the well width.
metadata_83中科院半导体材料科学重点实验室
KeywordEpitaxy Movpe
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences, China
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22789
Collection中科院半导体材料科学重点实验室
Corresponding AuthorYang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
Recommended Citation
GB/T 7714
Wang M,Gu YX,Ji HM,et al. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model[J]. CHINESE PHYSICS B,2011,20(7):77301.
APA Wang M,Gu YX,Ji HM,Yang T,Wang ZG,&Yang, T .(2011).Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model.CHINESE PHYSICS B,20(7),77301.
MLA Wang M,et al."Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model".CHINESE PHYSICS B 20.7(2011):77301.
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