Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model | |
Wang M; Gu YX; Ji HM; Yang T; Wang ZG; Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn | |
2011 | |
Source Publication | CHINESE PHYSICS B
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ISSN | 1009-1963 |
Volume | 20Issue:7Pages:77301 |
Abstract | We investigate the band structure of a compressively strained In(Ga)As/In(0.53)Ga(0.47)As quantum well (QW) on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 mu m, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs/In(0.53)Ga(0.47)As QW with a well width of 4.1 nm emitting at 2.33 mu m by optimizing the strain and the well width. |
metadata_83 | 中科院半导体材料科学重点实验室 |
Keyword | Epitaxy Movpe |
Subject Area | 半导体材料 |
Funding Organization | Chinese Academy of Sciences, China |
Indexed By | SCI |
Language | 英语 |
Date Available | 2012-02-06 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/22789 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn |
Recommended Citation GB/T 7714 | Wang M,Gu YX,Ji HM,et al. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model[J]. CHINESE PHYSICS B,2011,20(7):77301. |
APA | Wang M,Gu YX,Ji HM,Yang T,Wang ZG,&Yang, T .(2011).Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model.CHINESE PHYSICS B,20(7),77301. |
MLA | Wang M,et al."Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model".CHINESE PHYSICS B 20.7(2011):77301. |
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