SEMI OpenIR  > 中科院半导体材料科学重点实验室
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG; Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
2011
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume44Issue:24Pages:245402
AbstractIn this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on gamma-LiAlO(2)(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction omega/2 theta scan together with polarized Raman spectroscopy. The epitaxial relationship between the m-plane InN and the substrate was found to be [0 0 0 1](InN) parallel to [0 1 0](LAO) and [1 1 - 2 0](InN) parallel to [0 0 1](LAO). The inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. Atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane InN film, which originated from the replication of the surface morphological anisotropy of the substrate. Scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. A small direct band gap of similar to 0.7eV of the m-plane InN film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. Finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the Burstein-Moss effect.
metadata_83中科院半导体材料科学重点实验室
KeywordFundamental-band Gap Indium Nitride Buffer Layer Dependence Sapphire Mocvd
Subject Area半导体材料
Funding OrganizationSpecial Funds for Major State Basic Research Project[2011CB301900]; Hi-tech Research Project[2009AA03A198]; National Nature Science Foundation of China[60990311, 60721063, 60906025, 60936004]; Nature Science Foundation of Jiangsu Province[BK2008019, BK2010385, BK2009255, BK2010178]; NJU-Yangzhou Institute of Opto-electronics; Graduate Student Research Innovation Project of Jiangsu Province[CX09B 009Z]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22781
Collection中科院半导体材料科学重点实验室
Corresponding AuthorFu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
Recommended Citation
GB/T 7714
Fu D,Zhang R,Liu B,et al. Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(24):245402.
APA Fu D.,Zhang R.,Liu B.,Xie ZL.,Xiu XQ.,...&Fu, D .(2011).Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(24),245402.
MLA Fu D,et al."Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.24(2011):245402.
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