SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-power quantum dot superluminescent diode with integrated optical amplifier section
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG; Wang, ZC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
2011
Source PublicationELECTRONICS LETTERS
ISSN0013-5194
Volume47Issue:21Pages:1191-
AbstractA 1.1 mu m high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.
metadata_83中科院半导体材料科学重点实验室
KeywordLight-emitting-diodes Spectrum
Subject Area半导体材料
Funding OrganizationNational Basic Research Program of China[2006CB604904]; National Natural Science Foundation of China[60976057, 60876086, 60776037]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22777
Collection中科院半导体材料科学重点实验室
Corresponding AuthorWang, ZC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn
Recommended Citation
GB/T 7714
Wang, ZC,Jin, P,Lv, XQ,et al. High-power quantum dot superluminescent diode with integrated optical amplifier section[J]. ELECTRONICS LETTERS,2011,47(21):1191-.
APA Wang, ZC,Jin, P,Lv, XQ,Li, XK,Wang, ZG,&Wang, ZC .(2011).High-power quantum dot superluminescent diode with integrated optical amplifier section.ELECTRONICS LETTERS,47(21),1191-.
MLA Wang, ZC,et al."High-power quantum dot superluminescent diode with integrated optical amplifier section".ELECTRONICS LETTERS 47.21(2011):1191-.
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