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Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
Liang S; Kong DH; Zhu HL; Wang W; Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, liangsong@red.semi.ac.cn
2011
Source PublicationIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN1077-260X
Volume17Issue:4Pages:960-965
AbstractThe growth of self-assembled nanowires on stepped substrates is modeled by means of kinetic Monte Carlo simulations. It is found that the energy barrier at the step edges has a great effect on the formation of nanoislands on stepped substrates. As the barrier is smaller than 0.1 eV, nanowires with high aspect ratios can be obtained. The width, aspect ratio, and separation of the nanowires can be controlled flexibly by the width of the steps or terraces of the substrates. The effects of growth temperature and postgrowth annealing time on the morphology of the nanowires are studied. The nanowires are found to be more robust than the self-assembled nanoislands formed on plane substrates. Strain is shown to increase the width and decrease the aspect ratio of the nanowires. The scaled nanowire length distribution is also studied. As the coverage is larger than 0.2 ML, the distribution is apparently different from that at lower coverage, which reflects the different growth mechanisms of the nanowires at different layer thickness.
metadata_83中科院半导体材料科学重点实验室
KeywordChemical-vapor-deposition Molecular-beam Epitaxy Quantum Dots Surface Migration Fabrication Gaas(100) Islands Wires
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China[60706009, 90401025, 60736036, 60777021, 60476009]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22775
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiang, S (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, liangsong@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liang S,Kong DH,Zhu HL,et al. Growth Simulations of Self-Assembled Nanowires on Stepped Substrates[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2011,17(4):960-965.
APA Liang S,Kong DH,Zhu HL,Wang W,&Liang, S .(2011).Growth Simulations of Self-Assembled Nanowires on Stepped Substrates.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,17(4),960-965.
MLA Liang S,et al."Growth Simulations of Self-Assembled Nanowires on Stepped Substrates".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 17.4(2011):960-965.
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