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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG; Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
2011
Source PublicationNANOSCALE RESEARCH LETTERS
ISSN1931-7573
Volume6Pages:463
AbstractCatalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as- grown InAs NWs show a zinc- blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst- free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave- numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 x 10(17) cm(-3) from the Raman line shape analysis. A splitting of TO modes is also observed.
metadata_83中科院半导体材料科学重点实验室
KeywordRaman-scattering Semiconducting Nanowires Optoelectronic Devices Phosphide Nanowires Optical Phonons Silicon Crystals Spectra
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China[60625402, 60990313]; 973 program
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22773
Collection中科院半导体材料科学重点实验室
Corresponding AuthorChen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
Recommended Citation
GB/T 7714
Li, TF,Chen, YH,Lei, W,et al. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates[J]. NANOSCALE RESEARCH LETTERS,2011,6:463.
APA Li, TF.,Chen, YH.,Lei, W.,Zhou, XL.,Luo, S.,...&Chen, YH .(2011).Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates.NANOSCALE RESEARCH LETTERS,6,463.
MLA Li, TF,et al."Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates".NANOSCALE RESEARCH LETTERS 6(2011):463.
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