| Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs | |
| Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H; Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn; kxu2006@sinano.ac.cn | |
| 2011 | |
| Source Publication | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| ISSN | 0022-3727 |
| Volume | 44Issue:35Pages:355101 |
| Abstract | A comprehensive temperature characterization method based on the GaNE(2)-high Raman mode and sapphire ruby R fluorescence lines from Raman spectra was developed to analyse the thermal distribution and heat transfer process of high-power flip-chip InGaN/GaN LEDs (FC LEDs). Our analysis demonstrated that in addition to the known problem that the edges of mesa were always the hottest point of FC LEDs, which was due to the current crowding effect, a noteworthy temperature difference was first observed between the sapphire substrate and n-GaN when the injection current was above 300 mA. A 'heat reservoir' was suggested to occur at the interface between the sapphire and n-GaN due to poor thermal conductivity of sapphire when a large amount of heat from the hottest spot cannot be effectively transferred to the Si mount via the active region under high injection currents. |
| metadata_83 | 中科院半导体材料科学重点实验室 |
| Keyword | Light-emitting-diodes Temperature-measurements Gan Scattering Dependence Junction Phonons Aln |
| Subject Area | 半导体器件 |
| Funding Organization | National Natural Science Foundation of China[50902099]; Suzhou Science and Technology project[ZXG0804]; CAS[YZ200939] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-02-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22771 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn; kxu2006@sinano.ac.cn |
| Recommended Citation GB/T 7714 | Cui M,Zhou TF,Wang MR,et al. Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(35):355101. |
| APA | Cui M.,Zhou TF.,Wang MR.,Huang J.,Huang HJ.,...&kxu2006@sinano.ac.cn.(2011).Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(35),355101. |
| MLA | Cui M,et al."Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.35(2011):355101. |
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| File Name/Size | DocType | Version | Access | License | ||
| Comprehensive therma（188KB） | 限制开放 | -- | Application Full Text | |||
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