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Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs
Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H; Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn; kxu2006@sinano.ac.cn
2011
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume44Issue:35Pages:355101
AbstractA comprehensive temperature characterization method based on the GaNE(2)-high Raman mode and sapphire ruby R fluorescence lines from Raman spectra was developed to analyse the thermal distribution and heat transfer process of high-power flip-chip InGaN/GaN LEDs (FC LEDs). Our analysis demonstrated that in addition to the known problem that the edges of mesa were always the hottest point of FC LEDs, which was due to the current crowding effect, a noteworthy temperature difference was first observed between the sapphire substrate and n-GaN when the injection current was above 300 mA. A 'heat reservoir' was suggested to occur at the interface between the sapphire and n-GaN due to poor thermal conductivity of sapphire when a large amount of heat from the hottest spot cannot be effectively transferred to the Si mount via the active region under high injection currents.
metadata_83中科院半导体材料科学重点实验室
KeywordLight-emitting-diodes Temperature-measurements Gan Scattering Dependence Junction Phonons Aln
Subject Area半导体器件
Funding OrganizationNational Natural Science Foundation of China[50902099]; Suzhou Science and Technology project[ZXG0804]; CAS[YZ200939]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22771
Collection中科院半导体材料科学重点实验室
Corresponding AuthorCui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn; kxu2006@sinano.ac.cn
Recommended Citation
GB/T 7714
Cui M,Zhou TF,Wang MR,et al. Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(35):355101.
APA Cui M.,Zhou TF.,Wang MR.,Huang J.,Huang HJ.,...&kxu2006@sinano.ac.cn.(2011).Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(35),355101.
MLA Cui M,et al."Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.35(2011):355101.
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