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Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces
Zhang, YH; Ma, WQ; Cao, YL; Huang, JL; Wei, Y; Cui, K; Shao, J; Ma, WQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China,wqma@semi.ac.cn
2011
Source PublicationIEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN0018-9197
Volume47Issue:12Pages:1475-1479
AbstractWe report on long wavelength infrared photodetectors using InAs/GaSb superlattices (SLs) with InSb-like and mixed interfaces (IFs). X-ray diffraction (XRD) measurements indicate that the SLs with mixed IFs have a narrower linewidth. The full-width at half-maximum of the -1st XRD satellite peak is 24 arcsec for the sample with InSb-like IFs and is only 17 arcsec for the sample with mixed IFs. However, in terms of infrared photodetection, InSb-like IFs are superior to the mixed ones. Stronger photoluminescence and photoresponse signals are observed for the sample with InSb-like IFs.
metadata_83纳米光电子实验室
KeywordInas/gasb Interfaces Long Wavelength Infrared Photodetector Type Ii Superlattice Detectors Growth
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China 973 Program[2010CB327602]; Natural Science Foundation[61176014, 61176075, 61021003]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22749
Collection纳米光电子实验室
Corresponding AuthorMa, WQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China,wqma@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang, YH,Ma, WQ,Cao, YL,et al. Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS,2011,47(12):1475-1479.
APA Zhang, YH.,Ma, WQ.,Cao, YL.,Huang, JL.,Wei, Y.,...&Ma, WQ .(2011).Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces.IEEE JOURNAL OF QUANTUM ELECTRONICS,47(12),1475-1479.
MLA Zhang, YH,et al."Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces".IEEE JOURNAL OF QUANTUM ELECTRONICS 47.12(2011):1475-1479.
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