SEMI OpenIR  > 纳米光电子实验室
Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure
Cui K; Ma WQ; Zhang YH; Huang JL; Wei Y; Cao YL; Jin Z; Bian LF; Ma, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China, wqma@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:2Pages:23502
AbstractWe report a specially designed p-i-n quantum dot (QD) device in which both the intersubband and the interband transitions of the QD are controlled by the applied forward bias voltage. The design is achieved by using asymmetric AlGaAs barriers on both sides of only one QD layer and by placing two-dimensional electron gas structure on one side of the QD layer. Experimentally, at 77 K, the device can detect normal incidence infrared light of about 5.6 mu m when the forward bias voltage is in between about 3 and 7 V, while it emits electroluminescence of about 1 mu m when the applied forward bias voltage is larger than 11 V. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607308]
metadata_83纳米光电子实验室
KeywordDetector
Subject Area光电子学
Funding OrganizationChina's National 973 Research Programme[2010CB327602]; Natural Science Fund for Innovative Research Group[61021003]; NSF[60806048]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22747
Collection纳米光电子实验室
Corresponding AuthorMa, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China, wqma@semi.ac.cn
Recommended Citation
GB/T 7714
Cui K,Ma WQ,Zhang YH,et al. Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure[J]. APPLIED PHYSICS LETTERS,2011,99(2):23502.
APA Cui K.,Ma WQ.,Zhang YH.,Huang JL.,Wei Y.,...&Ma, WQ .(2011).Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure.APPLIED PHYSICS LETTERS,99(2),23502.
MLA Cui K,et al."Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure".APPLIED PHYSICS LETTERS 99.2(2011):23502.
Files in This Item:
File Name/Size DocType Version Access License
Forward bias voltage(1125KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Cui K]'s Articles
[Ma WQ]'s Articles
[Zhang YH]'s Articles
Baidu academic
Similar articles in Baidu academic
[Cui K]'s Articles
[Ma WQ]'s Articles
[Zhang YH]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Cui K]'s Articles
[Ma WQ]'s Articles
[Zhang YH]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.