| Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure | |
| Cui K; Ma WQ; Zhang YH; Huang JL; Wei Y; Cao YL; Jin Z; Bian LF; Ma, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China, wqma@semi.ac.cn | |
| 2011 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 99Issue:2Pages:23502 |
| Abstract | We report a specially designed p-i-n quantum dot (QD) device in which both the intersubband and the interband transitions of the QD are controlled by the applied forward bias voltage. The design is achieved by using asymmetric AlGaAs barriers on both sides of only one QD layer and by placing two-dimensional electron gas structure on one side of the QD layer. Experimentally, at 77 K, the device can detect normal incidence infrared light of about 5.6 mu m when the forward bias voltage is in between about 3 and 7 V, while it emits electroluminescence of about 1 mu m when the applied forward bias voltage is larger than 11 V. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607308] |
| metadata_83 | 纳米光电子实验室 |
| Keyword | Detector |
| Subject Area | 光电子学 |
| Funding Organization | China's National 973 Research Programme[2010CB327602]; Natural Science Fund for Innovative Research Group[61021003]; NSF[60806048] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-02-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22747 |
| Collection | 纳米光电子实验室 |
| Corresponding Author | Ma, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China, wqma@semi.ac.cn |
| Recommended Citation GB/T 7714 | Cui K,Ma WQ,Zhang YH,et al. Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure[J]. APPLIED PHYSICS LETTERS,2011,99(2):23502. |
| APA | Cui K.,Ma WQ.,Zhang YH.,Huang JL.,Wei Y.,...&Ma, WQ .(2011).Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure.APPLIED PHYSICS LETTERS,99(2),23502. |
| MLA | Cui K,et al."Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure".APPLIED PHYSICS LETTERS 99.2(2011):23502. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Forward bias voltage（1125KB） | 限制开放 | -- | Application Full Text | |||
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