| Spatial hole burning degradation of AlGaAs/GaAs laser diodes | |
| Qiao YB; Feng SW; Xiong C; Wang XW; Ma XY; Zhu H; Wei GH; Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn | |
| 2011 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 99Issue:10Pages:103506 |
| Abstract | The degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques. Our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. Based on the XRD measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3634051] |
| metadata_83 | 光电子研究发展中心 |
| Keyword | Facets Operation |
| Subject Area | 光电子学 |
| Funding Organization | High-tech Research and Development Program of China (863 Program)[2009AA032704]; Beijing Natural Science Foundation, China[4092005] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22727 |
| Collection | 光电子研究发展中心 |
| Corresponding Author | Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn |
| Recommended Citation GB/T 7714 | Qiao YB,Feng SW,Xiong C,et al. Spatial hole burning degradation of AlGaAs/GaAs laser diodes[J]. APPLIED PHYSICS LETTERS,2011,99(10):103506. |
| APA | Qiao YB.,Feng SW.,Xiong C.,Wang XW.,Ma XY.,...&Feng, SW .(2011).Spatial hole burning degradation of AlGaAs/GaAs laser diodes.APPLIED PHYSICS LETTERS,99(10),103506. |
| MLA | Qiao YB,et al."Spatial hole burning degradation of AlGaAs/GaAs laser diodes".APPLIED PHYSICS LETTERS 99.10(2011):103506. |
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| File Name/Size | DocType | Version | Access | License | ||
| Spatial hole burning（1208KB） | 限制开放 | -- | Application Full Text | |||
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