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Spatial hole burning degradation of AlGaAs/GaAs laser diodes
Qiao YB; Feng SW; Xiong C; Wang XW; Ma XY; Zhu H; Wei GH; Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:10Pages:103506
AbstractThe degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques. Our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. Based on the XRD measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3634051]
metadata_83光电子研究发展中心
KeywordFacets Operation
Subject Area光电子学
Funding OrganizationHigh-tech Research and Development Program of China (863 Program)[2009AA032704]; Beijing Natural Science Foundation, China[4092005]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22727
Collection光电子研究发展中心
Corresponding AuthorFeng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn
Recommended Citation
GB/T 7714
Qiao YB,Feng SW,Xiong C,et al. Spatial hole burning degradation of AlGaAs/GaAs laser diodes[J]. APPLIED PHYSICS LETTERS,2011,99(10):103506.
APA Qiao YB.,Feng SW.,Xiong C.,Wang XW.,Ma XY.,...&Feng, SW .(2011).Spatial hole burning degradation of AlGaAs/GaAs laser diodes.APPLIED PHYSICS LETTERS,99(10),103506.
MLA Qiao YB,et al."Spatial hole burning degradation of AlGaAs/GaAs laser diodes".APPLIED PHYSICS LETTERS 99.10(2011):103506.
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