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A self-aligned process for phase-change material nanowire confined within metal electrode nanogap
Ma, HL; Wang, XF; Zhang, JY; Wang, XD; Hu, CX; Yang, X; Fu, YC; Chen, XG; Song, ZT; Feng, SL; Ji, A; Yang, FH; Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China,fhyang@red.semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:17Pages:173107
AbstractA self-aligned fabrication process is presented by which phase-change material nanowire (NW) perfectly confined within metal electrode nanogap based on electron-beam lithography and inductively coupled plasma etching process. Lateral phase-change random access memory device fabrication is demonstrated by this process with Ge(2)Sb(2)Te(5) NW confined within 39 nm tungsten electrode nanogap and the electrical characterizations are illustrated. It is found that the threshold current is only 2 mu A and the dc power consumption is remarkably low. The process is simple, flexible and achieves localization filling. In addition, the process can be easily transferred to other types of phase-change and nanoelectronics materials. (C) 2011 American Institute of Physics. [doi:10.1063/1.3650928]
metadata_83半导体集成技术工程研究中心
KeywordChange Memory Nonvolatile Storage Cell
Subject Area半导体器件
Funding OrganizationNational High-tech Research and Development Program (863)[2008AA031402]; National Natural Science Foundation of China[60606024, 61006073, 61106120]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22723
Collection半导体集成技术工程研究中心
Corresponding AuthorYang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China,fhyang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Ma, HL,Wang, XF,Zhang, JY,et al. A self-aligned process for phase-change material nanowire confined within metal electrode nanogap[J]. APPLIED PHYSICS LETTERS,2011,99(17):173107.
APA Ma, HL.,Wang, XF.,Zhang, JY.,Wang, XD.,Hu, CX.,...&Yang, FH .(2011).A self-aligned process for phase-change material nanowire confined within metal electrode nanogap.APPLIED PHYSICS LETTERS,99(17),173107.
MLA Ma, HL,et al."A self-aligned process for phase-change material nanowire confined within metal electrode nanogap".APPLIED PHYSICS LETTERS 99.17(2011):173107.
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