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| Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point | |
| Wang, LG; Shen, C; Zheng, HZ; Zhu, H; Zhao, JH; Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn | |
| 2011 | |
| Source Publication | CHINESE PHYSICS B
 |
| ISSN | 1674-1056 |
| Volume | 20Issue:10Pages:100301 |
| Abstract | This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A(Mn)(+) centre with two holes weakly bound by a negatively charged 3d(5)(Mn) core of a local spin S = 5/2 in the framework of the effective mass approximation near the Gamma critical point (k similar to 0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A(Mn)(+) are calculated within a hole concentration range from 1 x 10(16) cm(-3) to 1 x 10(17) cm(-3), which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A(Mn)(0) centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A(Mn)(+) centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A(Mn)(+) centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A(Mn)(+) centre since a high frequency dielectric constant of epsilon(infinity) = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A(Mn)(+) centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors. |
| metadata_83 | 半导体超晶格国家重点实验室 |
| Keyword | Charged Acceptor Centre Screening Effect Exchange Interaction Shallow Acceptor States Gallium-arsenide Semiconductors Field |
| Subject Area | 半导体物理 |
| Funding Organization | National Basic Research Program of China[2007CB924904, 2011CB932901] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22709 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn |
| Recommended Citation GB/T 7714 | Wang, LG,Shen, C,Zheng, HZ,et al. Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point[J]. CHINESE PHYSICS B,2011,20(10):100301. |
| APA | Wang, LG,Shen, C,Zheng, HZ,Zhu, H,Zhao, JH,&Zheng, HZ .(2011).Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point.CHINESE PHYSICS B,20(10),100301. |
| MLA | Wang, LG,et al."Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point".CHINESE PHYSICS B 20.10(2011):100301. |
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