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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
Zhang, J; Tan, PH; Zhao, WJ; Lu, J; Zhao, JH; Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China,phtan@semi.ac.cn
2011
Source PublicationJOURNAL OF RAMAN SPECTROSCOPY
ISSN0377-0486
Volume42Issue:6Pages:1388-1391
AbstractThe growth and characterization of high-quality ultrathin Fe(3)O(4) films on semiconductor substrates is a key step for spintronic devices. A stable, single-crystalline ultrathin Fe(3)O(4) film on GaAs(001) substrate is obtained by post-growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high ability to convincingly characterize the stoichiometry, epitaxial orientation and strain of such ultrathin Fe(3)O(4) films. Polarized Raman spectroscopy confirms the unit cell of Fe(3)O(4) films is rotated by 45 degrees to match that of the Fe (001) layer on GaAs, which results in a built-in strain of -3.5% in Fe(3)O(4) films. The phonon strain-shift coefficient(-126 cm(-1)) of the A(1g) mode is proposed to probe strain effect and strain relaxation of thin Fe(3)O(4) films on substrates. It can be used to identify whether the Fe layer is fully oxidized to Fe(3)O(4) or not. Copyright (C) 2011 John Wiley & Sons, Ltd.
metadata_83半导体超晶格国家重点实验室
KeywordRaman Spectroscopy Ultrathin Fe(3)o(4) Film Crystal Orientation Strain Phonon Strain-shift Coefficient Pulsed-laser Deposition Thin-films Spin-transport Magnetite Semiconductors Spintronics Scattering Corrosion Devices Growth
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China[10874177, 10934007]; special funds for the Major State Basic Research of China[2007CB924903, 2009CB929300]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22705
Collection半导体超晶格国家重点实验室
Corresponding AuthorTan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China,phtan@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang, J,Tan, PH,Zhao, WJ,et al. Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain[J]. JOURNAL OF RAMAN SPECTROSCOPY,2011,42(6):1388-1391.
APA Zhang, J,Tan, PH,Zhao, WJ,Lu, J,Zhao, JH,&Tan, PH .(2011).Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain.JOURNAL OF RAMAN SPECTROSCOPY,42(6),1388-1391.
MLA Zhang, J,et al."Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain".JOURNAL OF RAMAN SPECTROSCOPY 42.6(2011):1388-1391.
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