SEMI OpenIR  > 半导体超晶格国家重点实验室
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
Shang XJ; He JF; Li MF; Zhan F; Ni HQ; Niu ZC; Pettersson H; Fu Y; Fu, Y (reprint author), Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Swedenfyg@theochem.kth.se
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:11Pages:113514
AbstractPhotocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]
metadata_83半导体超晶格国家重点实验室
KeywordWell Infrared Photodetector Photocurrent Efficiency
Subject Area半导体物理
Funding OrganizationChinese Natural Science Fund[60625405, 90921015]; 973 project in China[2010CB327601]; Richertska Foundation in Sweden
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22703
Collection半导体超晶格国家重点实验室
Corresponding AuthorFu, Y (reprint author), Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Swedenfyg@theochem.kth.se
Recommended Citation
GB/T 7714
Shang XJ,He JF,Li MF,et al. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells[J]. APPLIED PHYSICS LETTERS,2011,99(11):113514.
APA Shang XJ.,He JF.,Li MF.,Zhan F.,Ni HQ.,...&Fu, Y .(2011).Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells.APPLIED PHYSICS LETTERS,99(11),113514.
MLA Shang XJ,et al."Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells".APPLIED PHYSICS LETTERS 99.11(2011):113514.
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