Molecular dynamics simulation for heat transport in thin diamond nanowires

	Molecular dynamics simulation for heat transport in thin diamond nanowires
	Jiang JW; Wang BS; Wang JS; Jiang, JW (reprint author), Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg
	2011
Source Publication	PHYSICAL REVIEW B
ISSN	1098-0121
Volume	83 Issue:23 Pages:235432
Abstract	It is found that the thermal conductivity in narrower DNW is lower and does not show obvious temperature dependence; a very small value (about 2.0 W/m/K) of thermal conductivity is observed in ultra-narrow DNW, which may be of potential applications in thermoelectric devices. These two phenomena are probably due to the dominant surface effect and phonon confinement effect in narrow DNW. Our simulation reveals a high anisotropy in the heat transport of DNW. Specifically, the thermal conductivity in DNW along [110] growth direction is about five times larger than that of [100] and [111] growth directions. The anisotropy is believed to root in the anisotropic group velocity for acoustic phonon modes in DNW along three different growth directions.
metadata_83	半导体超晶格国家重点实验室
Keyword	Lattice Thermal-conductivity Silicon Nanowires Confinement Nanotubes
Subject Area	半导体物理
Funding Organization	National University of Singapore[R-144-000-257-112]
Indexed By	SCI
Language	英语
Date Available	2012-01-06
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/22697
Collection	半导体超晶格国家重点实验室
Corresponding Author	Jiang, JW (reprint author), Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg
Recommended Citation GB/T 7714	Jiang JW,Wang BS,Wang JS,et al. Molecular dynamics simulation for heat transport in thin diamond nanowires[J]. PHYSICAL REVIEW B,2011,83(23):235432.
APA	Jiang JW,Wang BS,Wang JS,&Jiang, JW .(2011).Molecular dynamics simulation for heat transport in thin diamond nanowires.PHYSICAL REVIEW B,83(23),235432.
MLA	Jiang JW,et al."Molecular dynamics simulation for heat transport in thin diamond nanowires".PHYSICAL REVIEW B 83.23(2011):235432.

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