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Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
Yu GQ; Chen L; Rizwan S; Zhao JH; Xu K; Han XF; Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:26Pages:262501
AbstractWe fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101% is achieved at 2 K, and the spin polarization of (Ga,Mn) As, P = 56.8%, is deduced from Julliere's formula. The improved TMR ratio is primarily due to the improved magnetism of (Ga,Mn) As layer by low-temperature annealing and cleaned interface between (Ga,Mn) As and AlO(x) attained by subsequent plasma cleaning process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603946]
metadata_83半导体超晶格国家重点实验室
KeywordTemperature (Ga Ga1-xmnxas Mn)As Transport Epilayers Films
Subject Area半导体物理
Funding OrganizationFundamental Research of Ministry of Science and Technology [MOST][2010CB934400]; National Natural Science Foundation of China [NSFC][10934099, 10874225, 51021061]; K. C. Wong Education Foundation, Hong Kong
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22687
Collection半导体超晶格国家重点实验室
Corresponding AuthorHan, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn
Recommended Citation
GB/T 7714
Yu GQ,Chen L,Rizwan S,et al. Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions[J]. APPLIED PHYSICS LETTERS,2011,98(26):262501.
APA Yu GQ.,Chen L.,Rizwan S.,Zhao JH.,Xu K.,...&Han, XF .(2011).Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions.APPLIED PHYSICS LETTERS,98(26),262501.
MLA Yu GQ,et al."Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions".APPLIED PHYSICS LETTERS 98.26(2011):262501.
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