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| Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions | |
| Yu GQ; Chen L; Rizwan S; Zhao JH; Xu K; Han XF; Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn | |
| 2011 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 98Issue:26Pages:262501 |
| Abstract | We fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101% is achieved at 2 K, and the spin polarization of (Ga,Mn) As, P = 56.8%, is deduced from Julliere's formula. The improved TMR ratio is primarily due to the improved magnetism of (Ga,Mn) As layer by low-temperature annealing and cleaned interface between (Ga,Mn) As and AlO(x) attained by subsequent plasma cleaning process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603946] |
| metadata_83 | 半导体超晶格国家重点实验室 |
| Keyword | Temperature (Ga Ga1-xmnxas Mn)As Transport Epilayers Films |
| Subject Area | 半导体物理 |
| Funding Organization | Fundamental Research of Ministry of Science and Technology [MOST][2010CB934400]; National Natural Science Foundation of China [NSFC][10934099, 10874225, 51021061]; K. C. Wong Education Foundation, Hong Kong |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22687 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn |
| Recommended Citation GB/T 7714 | Yu GQ,Chen L,Rizwan S,et al. Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions[J]. APPLIED PHYSICS LETTERS,2011,98(26):262501. |
| APA | Yu GQ.,Chen L.,Rizwan S.,Zhao JH.,Xu K.,...&Han, XF .(2011).Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions.APPLIED PHYSICS LETTERS,98(26),262501. |
| MLA | Yu GQ,et al."Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions".APPLIED PHYSICS LETTERS 98.26(2011):262501. |
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| Improved tunneling m（923KB） | 限制开放 | -- | Application Full Text | |||
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