SEMI OpenIR  > 半导体超晶格国家重点实验室
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC; He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
2011
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume44Issue:33Pages:335102
AbstractMolecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 x 10(3) cm(-2). The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7A cm(-2).
metadata_83半导体超晶格国家重点实验室
Keyword1.3 Mu-m Strain Relief Lasers Substrate Photoluminescence Dislocations Operation Range
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China[10734060, 90921015]; National Basic Research Program of China[2007CB936304, 2010CB327601]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22685
Collection半导体超晶格国家重点实验室
Corresponding AuthorHe, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
Recommended Citation
GB/T 7714
He JF,Wang HL,Shang XJ,et al. GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(33):335102.
APA He JF.,Wang HL.,Shang XJ.,Li MF.,Zhu Y.,...&He, JF .(2011).GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(33),335102.
MLA He JF,et al."GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.33(2011):335102.
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