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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
Lv YJ; Lin ZJ; Meng LG; Yu YX; Luan CB; Cao ZF; Chen H; Sun BQ; Wang ZG; Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume99Issue:12Pages:123504
AbstractBoth circular and rectangular Ni Schottky contacts on AlGaN/AlN/GaN heterostructures have been fabricated. Both of the Schottky barrier heights were measured by internal photoemission. The flat-band voltage (V(0)) for the AlGaN/AlN/GaN heterostructure Schottky contacts was analyzed and obtained from the forward current-voltage (I-V) characteristics. Based on the forward I-V characteristics and with the obtained flat-band voltage, the Schottky barrier heights for the circular and rectangular diodes have been analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. The evaluated Schottky barrier heights for the prepared circular and rectangular Ni Schottky diodes agree well with the photocurrent measured results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643139]
metadata_83半导体超晶格国家重点实验室
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China[10774090]; National Basic Research Program of China[2007CB936602]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22683
Collection半导体超晶格国家重点实验室
Corresponding AuthorLin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
Recommended Citation
GB/T 7714
Lv YJ,Lin ZJ,Meng LG,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. APPLIED PHYSICS LETTERS,2011,99(12):123504.
APA Lv YJ.,Lin ZJ.,Meng LG.,Yu YX.,Luan CB.,...&Lin, ZJ .(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.APPLIED PHYSICS LETTERS,99(12),123504.
MLA Lv YJ,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".APPLIED PHYSICS LETTERS 99.12(2011):123504.
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