SEMI OpenIR  > 半导体超晶格国家重点实验室
Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
Chen L; Yang X; Yang FH; Zhao JH; Misuraca J; Xiong P; von Molnar S; Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn
2011
Source PublicationNANO LETTERS
ISSN1530-6984
Volume11Issue:7Pages:2584-2589
AbstractWe demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures.
metadata_83半导体超晶格国家重点实验室
KeywordManipulation Gaas
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China[60836002, 10920101071]; Major State Basic Research of China[2007CB924903]; Chinese Academy of Sciences[KJCX2.YW.W09-1]; NSF Materials World Network[DMR-0908625]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22681
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Chen L,Yang X,Yang FH,et al. Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering[J]. NANO LETTERS,2011,11(7):2584-2589.
APA Chen L.,Yang X.,Yang FH.,Zhao JH.,Misuraca J.,...&Zhao, JH .(2011).Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering.NANO LETTERS,11(7),2584-2589.
MLA Chen L,et al."Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering".NANO LETTERS 11.7(2011):2584-2589.
Files in This Item:
File Name/Size DocType Version Access License
Enhancing the Curie (3284KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Chen L]'s Articles
[Yang X]'s Articles
[Yang FH]'s Articles
Baidu academic
Similar articles in Baidu academic
[Chen L]'s Articles
[Yang X]'s Articles
[Yang FH]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Chen L]'s Articles
[Yang X]'s Articles
[Yang FH]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.