Knowledge Management System Of Institute of Semiconductors,CAS
| Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering | |
| Chen L; Yang X; Yang FH; Zhao JH; Misuraca J; Xiong P; von Molnar S; Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn | |
| 2011 | |
| Source Publication | NANO LETTERS
 |
| ISSN | 1530-6984 |
| Volume | 11Issue:7Pages:2584-2589 |
| Abstract | We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures. |
| metadata_83 | 半导体超晶格国家重点实验室 |
| Keyword | Manipulation Gaas |
| Subject Area | 半导体物理 |
| Funding Organization | National Natural Science Foundation of China[60836002, 10920101071]; Major State Basic Research of China[2007CB924903]; Chinese Academy of Sciences[KJCX2.YW.W09-1]; NSF Materials World Network[DMR-0908625] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22681 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn |
| Recommended Citation GB/T 7714 | Chen L,Yang X,Yang FH,et al. Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering[J]. NANO LETTERS,2011,11(7):2584-2589. |
| APA | Chen L.,Yang X.,Yang FH.,Zhao JH.,Misuraca J.,...&Zhao, JH .(2011).Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering.NANO LETTERS,11(7),2584-2589. |
| MLA | Chen L,et al."Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering".NANO LETTERS 11.7(2011):2584-2589. |
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| File Name/Size | DocType | Version | Access | License | ||
| Enhancing the Curie （3284KB） | 限制开放 | -- | Application Full Text | |||
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