| The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure | |
| Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ; Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn | |
| 2011 | |
| Source Publication | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
 |
| ISSN | 1286-0042 |
| Volume | 55Issue:1Pages:10102 |
| Abstract | This is a theoretical study of the InGaN back-barrier on the properties of the Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Algan/gan/ingan/gan Dh-hemts Field-effect Transistors Algan/gan Polarization Passivation Hfets Ghz |
| Subject Area | 半导体材料 |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22663 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn |
| Recommended Citation GB/T 7714 | Bi Y,Wang XL,Xiao HL,et al. The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):10102. |
| APA | Bi Y.,Wang XL.,Xiao HL.,Wang CM.,Peng EC.,...&Bi, Y .(2011).The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(1),10102. |
| MLA | Bi Y,et al."The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.1(2011):10102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The influence of the（1385KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment