SEMI OpenIR  > 半导体材料科学中心
Surface characterization of AlGaN grown on Si (111) substrates
Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H; Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume331Issue:1Pages:29-32
AbstractUp to 500 nm thick crack-free Al(0.25)Ga(0.75)N and Al(0.32)Ga(0.68)N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
metadata_83半导体材料科学中心
KeywordMolecular-beam Epitaxy Field-effect Transistors Vapor-phase Epitaxy Group-iii Nitrides Inversion Domains High-temperature Gan Si(111) Aln Sapphire
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22661
Collection半导体材料科学中心
Corresponding AuthorPan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Recommended Citation
GB/T 7714
Pan X,Wang XL,Xiao HL,et al. Surface characterization of AlGaN grown on Si (111) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32.
APA Pan X.,Wang XL.,Xiao HL.,Wang CM.,Feng C.,...&Pan, X .(2011).Surface characterization of AlGaN grown on Si (111) substrates.JOURNAL OF CRYSTAL GROWTH,331(1),29-32.
MLA Pan X,et al."Surface characterization of AlGaN grown on Si (111) substrates".JOURNAL OF CRYSTAL GROWTH 331.1(2011):29-32.
Files in This Item:
File Name/Size DocType Version Access License
Surface characteriza(596KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Pan X]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Baidu academic
Similar articles in Baidu academic
[Pan X]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Pan X]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.