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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG; Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn
2011
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN1369-8001
Volume14Issue:2Pages:97-100
AbstractWe studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature AlN buffer prominently influenced the morphology and the crystal quality of GaN epilayer. The optimized thickness of the AlN buffer is found to be about 150 nm. Under the optimized thickness, the largest crack-free range of GaN film is 10 mm x 10 mm and the full width at half maximum of GaN (0 0 0 2) rocking curve peak is 621.7 arcsec. Using high temperature AlN/AlGaN multibuffer combined with AlN/GaN superlattices interlayer we have obtained 2 mu m crack-free GaN epilayer on 2 in Si (1 1 1) substrates. (C) 2011 Elsevier Ltd. All rights reserved.
metadata_83半导体材料科学中心
KeywordGan Mocvd Si(111) Aln Vapor-phase Epitaxy Layers Substrate Mocvd Stress
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22655
Collection半导体材料科学中心
Corresponding AuthorWei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn
Recommended Citation
GB/T 7714
Wei, M,Wang, XL,Pan, X,et al. Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):97-100.
APA Wei, M.,Wang, XL.,Pan, X.,Xiao, HL.,Wang, CM.,...&Wei, M .(2011).Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1).MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,14(2),97-100.
MLA Wei, M,et al."Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 14.2(2011):97-100.
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