| Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) | |
| Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG; Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn | |
| 2011 | |
| Source Publication | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| ISSN | 1369-8001 |
| Volume | 14Issue:2Pages:97-100 |
| Abstract | We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature AlN buffer prominently influenced the morphology and the crystal quality of GaN epilayer. The optimized thickness of the AlN buffer is found to be about 150 nm. Under the optimized thickness, the largest crack-free range of GaN film is 10 mm x 10 mm and the full width at half maximum of GaN (0 0 0 2) rocking curve peak is 621.7 arcsec. Using high temperature AlN/AlGaN multibuffer combined with AlN/GaN superlattices interlayer we have obtained 2 mu m crack-free GaN epilayer on 2 in Si (1 1 1) substrates. (C) 2011 Elsevier Ltd. All rights reserved. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Gan Mocvd Si(111) Aln Vapor-phase Epitaxy Layers Substrate Mocvd Stress |
| Subject Area | 半导体材料 |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-01-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22655 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn |
| Recommended Citation GB/T 7714 | Wei, M,Wang, XL,Pan, X,et al. Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):97-100. |
| APA | Wei, M.,Wang, XL.,Pan, X.,Xiao, HL.,Wang, CM.,...&Wei, M .(2011).Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1).MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,14(2),97-100. |
| MLA | Wei, M,et al."Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 14.2(2011):97-100. |
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