SEMI OpenIR  > 半导体材料科学中心
Comparison of as-grown and annealed GaN/InGaN:Mg samples
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X; Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
2011
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume44Issue:34Pages:345101
AbstractMg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N(2) ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.
metadata_83半导体材料科学中心
KeywordLight-emitting-diodes Vapor-phase Epitaxy Band-gap Mg Photoluminescence Ingan Dependence Strain Energy Inn
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22653
Collection半导体材料科学中心
Corresponding AuthorDeng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
Recommended Citation
GB/T 7714
Deng QW,Wang XL,Xiao HL,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):345101.
APA Deng QW.,Wang XL.,Xiao HL.,Wang CM.,Yin HB.,...&Deng, QW .(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(34),345101.
MLA Deng QW,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.34(2011):345101.
Files in This Item:
File Name/Size DocType Version Access License
Comparison of as-gro(500KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Deng QW]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Baidu academic
Similar articles in Baidu academic
[Deng QW]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Deng QW]'s Articles
[Wang XL]'s Articles
[Xiao HL]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.