| VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy | |
| Zhao J; Zeng YP; Yang QM; Li YY; Cui LJ; Liu C; Zhao, J (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. jiezhao@semi.ac.cn | |
| 2011 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 329Issue:1Pages:40548 |
| Abstract | CdSe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) in a wide range of VI/II beam-equivalent-pressure (BEP) ratio from 1.1 to 8.5. X-ray diffraction (XRD) theta-2 theta scan reveals all the CdSe samples possess cubic zinc blende structure with (0 0 1) orientation. The film grown at a low VI/II ratio of 1.1 has rough surface with a three-dimensional (3D) growth mode, while two-dimensional (2D) growth can be established under Se-rich conditions at higher Se/Cd BEP ratios over 4.4. The growth rate increases monotonically with the VI/II ratio and becomes saturated when the ratio is raised to 8.5. The sample grown at a VI/II ratio of 8.5 shows the narrowest full-width at half-maximum (FWHM) of X-ray rocking curve (XRC) for (0 0 4) reflection. No near-band-edge (NBE) emission of CdSe is observed for the sample prepared at a low ratio of 1.1. The NBE emission from cubic CdSe at around 1.67 eV appears and its intensity is markedly enhanced by elevating the VI/II ratio. It is suggested that CdSe epilayer with good structural and optical properties can be prepared under a large VI/II BEP ratio. (C) 2011 Elsevier B.V. All rights reserved. |
| metadata_83 | 中科院半导体材料科学重点实验室 |
| Keyword | Zinc Blende Cdse Thin-films Optical-properties Deposition Znse |
| Subject Area | 半导体材料 |
| Funding Organization | Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001]; National Natural Science Foundation of China[0913120000] |
| Indexed By | SCI |
| Date Available | 2011-09-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22623 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Zhao, J (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. jiezhao@semi.ac.cn |
| Recommended Citation GB/T 7714 | Zhao J,Zeng YP,Yang QM,et al. VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,329(1):40548. |
| APA | Zhao J.,Zeng YP.,Yang QM.,Li YY.,Cui LJ.,...&Zhao, J .(2011).VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,329(1),40548. |
| MLA | Zhao J,et al."VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 329.1(2011):40548. |
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| VI II ratio-dependen（662KB） | 限制开放 | -- | Application Full Text | |||
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