SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
Yang QM; Zhao J; Guan M; Liu C; Cui LJ; Han DJ; Zeng YP; Zeng, YP (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. ypzeng@red.semi.ac.cn
2011
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume257Issue:21Pages:9038-9043
AbstractCdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 degrees C shows a polycrystalline structure with rough surface. As the temperature increases over 300 degrees C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 degrees C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal Xray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 degrees C were annealed in air for 30 min to study the films' thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 degrees C, meaning a good thermal stability of the cubic CdSe epilayers. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
metadata_83中科院半导体材料科学重点实验室
KeywordElectrical-properties Optical-properties Epilayers Zn1-xcdxse Deposition Substrate Znse
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001]; National Natural Science Foundation of China[0913120000]
Indexed BySCI
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22615
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZeng, YP (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. ypzeng@red.semi.ac.cn
Recommended Citation
GB/T 7714
Yang QM,Zhao J,Guan M,et al. Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(21):9038-9043.
APA Yang QM.,Zhao J.,Guan M.,Liu C.,Cui LJ.,...&Zeng, YP .(2011).Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,257(21),9038-9043.
MLA Yang QM,et al."Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 257.21(2011):9038-9043.
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