SEMI OpenIR  > 中科院半导体材料科学重点实验室
InP-based deep-ridge NPN transistor laser
Liang S; Kong DH; Zhu HL; Zhao LJ; Pan JQ; Wang W; Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China. liangsong@semi.ac.cn
2011
Source PublicationOPTICS LETTERS
ISSN0146-9592
Volume36Issue:16Pages:3206-3208
AbstractWe report an InP-based deep-ridge NPN transistor laser (TL, lambda similar to 1.5 mu m). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at -40 degrees C, which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected. (C) 2011 Optical Society of America
metadata_83中科院半导体材料科学重点实验室
KeywordOperation Epitaxy
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China (NSFC)[60706009, 61006044, 60736036, 61021003]; National 973 Program[2011CB301702]; National 863 Project[2009AA03Z442]
Indexed BySCI
Language英语
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22613
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China. liangsong@semi.ac.cn
Recommended Citation
GB/T 7714
Liang S,Kong DH,Zhu HL,et al. InP-based deep-ridge NPN transistor laser[J]. OPTICS LETTERS,2011,36(16):3206-3208.
APA Liang S.,Kong DH.,Zhu HL.,Zhao LJ.,Pan JQ.,...&Liang, S .(2011).InP-based deep-ridge NPN transistor laser.OPTICS LETTERS,36(16),3206-3208.
MLA Liang S,et al."InP-based deep-ridge NPN transistor laser".OPTICS LETTERS 36.16(2011):3206-3208.
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