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Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics
Xu D; Cheng XN; Yuan HM; Yang J; Lin YH; Xu, D (reprint author), Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China. frank@ujs.edu.cn
2011
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume509Issue:38Pages:9312-9317
AbstractY(NO(3))center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics were prepared using a solid reaction route. The microstructure, electrical properties, degradation coefficient (D(V)), and dielectric characteristics of varistor ceramics were studied in this paper. With increasing amounts of Y(NO(3))(3)center dot 6H(2)O in the starting composition, Y-containing Bi-rich, Y(2)O(3), and Sb(2)O(4) phases were formed, and the average grain size decreased. Results also showed that with the addition of 0.16 mol% Y(NO(3))(3)center dot 6H(2)O, Y(NO(3))(3)center dot 6H(2)O-doped ZnO-based varistor ceramics exhibit comparatively better comprehensive electrical properties, such as a threshold voltage of 425 V/mm, a nonlinear coefficient of 73.9, a leakage current of 1.78 mu A, and a degradation coefficient of 1.7. The dielectric characteristics and lightning surge test also received the same additional content of Y(NO(3))(3)center dot 6H(2)O. The results confirmed that doping with rare earth nitrates instead of rare earth oxides is very promising route in preparing high-performance ZnO-Bi(2)O(3)-based varistor ceramics. (C) 2011 Elsevier B. V. All rights reserved.
metadata_83中科院半导体材料科学重点实验室
KeywordZno-based Varistors Zno-pr6o11-based Varistors Sintering Temperature Dielectric-properties Bi2o3 Vaporization Relevant Parameter Cooling Rate Stability Voltage Oxide
Subject Area半导体材料
Funding OrganizationNational Nature Science Foundation of China[50902061]; State Key Laboratory of New Ceramic and Fine Processing Tsinghua University; State Key Laboratory of Electrical Insulation and Power Equipment[EIPE11204]; Shanghai Municipal Education Commission[J50102]; State Key Laboratory of Inorganic Synthesis and Preparative Chemistry of Jilin University[2011-22]; Universities Natural Science Research Project of Jiangsu Province[10KJD430002]; Research Foundation of Jiangsu University[11JDG084]; Industrial Center of Jiangsu University
Indexed BySCI
Language英语
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22609
Collection中科院半导体材料科学重点实验室
Corresponding AuthorXu, D (reprint author), Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China. frank@ujs.edu.cn
Recommended Citation
GB/T 7714
Xu D,Cheng XN,Yuan HM,et al. Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(38):9312-9317.
APA Xu D,Cheng XN,Yuan HM,Yang J,Lin YH,&Xu, D .(2011).Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics.JOURNAL OF ALLOYS AND COMPOUNDS,509(38),9312-9317.
MLA Xu D,et al."Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics".JOURNAL OF ALLOYS AND COMPOUNDS 509.38(2011):9312-9317.
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