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Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
Dong Z; Wang W; Huang BJ; Zhang X; Guan N; Chen HD; Dong, Z (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect Inst Semicond, Beijing 100083, Peoples R China. dongzan@semi.ac.cn
2011
Source PublicationCHINESE OPTICS LETTERS
ISSN1671-7694
Volume9Issue:8Pages:82301
AbstractLow-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85 x 38.4 (mu m), threshold voltage is 2.2 V in common condition, and temperature is 27 degrees C. The external quantum efficiency is about 10(-6) at stable operating state of 5 V and 177 mA.
metadata_83集成光电子学国家重点实验室
KeywordRoom-temperature Visible Photoluminescence Wave-guides Devices Electroluminescence Model Si
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China[61036002, 60536030, 60776024, 60877035, 61076023, 90820002]; National "863" Program of China[2007AA04Z329, 2007AA04Z254, 2011CB933203, 2011CB933102]
Indexed BySCI
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22589
Collection集成光电子学国家重点实验室
Corresponding AuthorDong, Z (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect Inst Semicond, Beijing 100083, Peoples R China. dongzan@semi.ac.cn
Recommended Citation
GB/T 7714
Dong Z,Wang W,Huang BJ,et al. Low threshold voltage light-emitting diode in silicon-based standard CMOS technology[J]. CHINESE OPTICS LETTERS,2011,9(8):82301.
APA Dong Z.,Wang W.,Huang BJ.,Zhang X.,Guan N.,...&Dong, Z .(2011).Low threshold voltage light-emitting diode in silicon-based standard CMOS technology.CHINESE OPTICS LETTERS,9(8),82301.
MLA Dong Z,et al."Low threshold voltage light-emitting diode in silicon-based standard CMOS technology".CHINESE OPTICS LETTERS 9.8(2011):82301.
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