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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
Wei M; Wang XL; Pan X; Xiao HL; Wang CM; Yang CB; Wang ZG; Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
2011
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume22Issue:8Pages:1028-1032
AbstractCrack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer.
metadata_83半导体材料科学中心
KeywordChemical-vapor-deposition Phase Epitaxy Aln Interlayers Films Stress Layers Dislocations Reduction Density Diodes
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB32 7503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS 2009L02]
Indexed BySCI
Language英语
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22575
Collection半导体材料科学中心
Corresponding AuthorWei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
Recommended Citation
GB/T 7714
Wei M,Wang XL,Pan X,et al. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22(8):1028-1032.
APA Wei M.,Wang XL.,Pan X.,Xiao HL.,Wang CM.,...&Wei, M .(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,22(8),1028-1032.
MLA Wei M,et al."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 22.8(2011):1028-1032.
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