| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates | |
Wei M; Wang XL; Pan X ; Xiao HL; Wang CM; Yang CB; Wang ZG; Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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| 2011 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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| ISSN | 0957-4522 |
| Volume | 22Issue:8Pages:1028-1032 |
| Abstract | Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Chemical-vapor-deposition Phase Epitaxy Aln Interlayers Films Stress Layers Dislocations Reduction Density Diodes |
| Subject Area | 半导体材料 |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB32 7503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS 2009L02] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-09-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22575 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn |
| Recommended Citation GB/T 7714 | Wei M,Wang XL,Pan X,et al. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22(8):1028-1032. |
| APA | Wei M.,Wang XL.,Pan X.,Xiao HL.,Wang CM.,...&Wei, M .(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,22(8),1028-1032. |
| MLA | Wei M,et al."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 22.8(2011):1028-1032. |
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