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The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
Bi Y; Wang XL; Yang CB; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ; Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN0947-8396
Volume104Issue:4Pages:1211-1216
AbstractThis is a theoretical study of the 1st AlN interlayer and the 2nd GaN layer on properties of the Al(0.3)Ga(0.7)N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the 1st AlN thickness from 1.0 nm to 3.0 nm, the 2DEG, which is originally confined totally in the 2nd channel, gradually decreases, begins to turn up and eventually concentrates in the 1st one. The total 2DEG (2DEG in both channels) sheet density increases nearly linearly with the increasing 1st AlN thickness. And the slope of the potential profile of the AlGaN changes with the 1st AlN thickness, causing the unusual dependence of the total 2DEG sheet density on the thickness of the AlGaN barrier. The variations of 2DEG distribution, the total 2DEG sheet density and the conduction band profiles as a function of the 2nd GaN thickness also have been discussed. Their physical mechanisms have been investigated on the basis of the surface state theory. And the confinement of 2DEG can be further enhanced by the double-AlN interlayer, compared with the InGaN back-barrier.
metadata_83半导体材料科学中心
Keyword2-dimensional Electron-gas Algan/gan/ingan/gan Dh-hemts Millimeter-wave Applications Field-effect Transistors Heterojunction Fets Heterostructures Passivation Confinement Performance Barriers
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Language英语
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22573
Collection半导体材料科学中心
Corresponding AuthorBi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
Recommended Citation
GB/T 7714
Bi Y,Wang XL,Yang CB,et al. The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(4):1211-1216.
APA Bi Y.,Wang XL.,Yang CB.,Xiao HL.,Wang CM.,...&Bi, Y .(2011).The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,104(4),1211-1216.
MLA Bi Y,et al."The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 104.4(2011):1211-1216.
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