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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H; Lin, DF (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. dflin@semi.ac.cn
2011
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN1286-0042
Volume55Issue:3Pages:30104
AbstractThe temperature dependence of the I-V characteristics on Au/Ni-HEMT Schottky contacts was measured and analyzed. Large deviations from the thermionic emission and thermionic-field emission model were observed in the I-V-T characteristics. The thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. Using a revised thin surface barrier model, the calculated curves match well with the measured curves. It is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.
metadata_83半导体材料科学中心
KeywordGan
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences[YYYJ-0701-02, ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]
Indexed BySCI
Language英语
Date Available2011-09-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22571
Collection半导体材料科学中心
Corresponding AuthorLin, DF (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. dflin@semi.ac.cn
Recommended Citation
GB/T 7714
Lin DF,Wang XL,Xiao HL,et al. The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(3):30104.
APA Lin DF.,Wang XL.,Xiao HL.,Wang CM.,Jiang LJ.,...&Lin, DF .(2011).The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(3),30104.
MLA Lin DF,et al."The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.3(2011):30104.
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