SEMI OpenIR  > 半导体材料科学中心
制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法
王晓亮; 张明兰; 肖红领; 王翠梅; 唐健; 冯春; 姜丽娟
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明公开了一种制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法,包括以下步骤:在衬底上生长氮化镓成核层;在氮化镓成核层上生长氮化镓缓冲层;在氮化镓缓冲层上生长高迁移率氮化镓层;在高迁移率氮化镓层上生长氮化铝插入层;在氮化铝插入层上生长铝镓氮势垒层;在铝镓氮势垒层上生长氮化铟盖帽层;刻蚀氮化铟盖帽层;制备源、漏欧姆接触;制备栅金属;电极金属加厚。利用本发明,降低了制备成本,简化了制备工艺,提高了工艺的可靠性。
metadata_83半导体材料科学中心
Patent NumberCN200810226288.9
Language中文
Status公开
Application NumberCN200810226288.9
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22335
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
王晓亮,张明兰,肖红领,等. 制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法. CN200810226288.9.
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