SEMI OpenIR  > 中科院半导体材料科学重点实验室
利用磁控溅射在石墨衬底上生长多晶硅薄膜的方法
施辉伟; 陈诺夫; 黄添懋; 尹志岗; 吴金良; 张汉
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种利用磁控溅射在石墨衬底上生长多晶硅薄膜的方法,包括如下步骤:步骤1:选择一石墨衬底,将石墨衬底抛光;步骤2:在磁控溅射室里,将抛光的石墨衬底磁控溅射多晶硅薄膜;步骤3:溅射结束后自然降温,形成样品;步骤4:将样品置于快速热退火炉里,快速退火,完成多晶硅薄膜的制作。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN200910242346.1
Language中文
Status公开
Application NumberCN200910242346.1
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22235
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
施辉伟,陈诺夫,黄添懋,等. 利用磁控溅射在石墨衬底上生长多晶硅薄膜的方法. CN200910242346.1.
Files in This Item:
File Name/Size DocType Version Access License
CN200910242346.1.pdf(244KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[施辉伟]'s Articles
[陈诺夫]'s Articles
[黄添懋]'s Articles
Baidu academic
Similar articles in Baidu academic
[施辉伟]'s Articles
[陈诺夫]'s Articles
[黄添懋]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[施辉伟]'s Articles
[陈诺夫]'s Articles
[黄添懋]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.