SEMI OpenIR  > 中科院半导体材料科学重点实验室
图案化纳米模板及其制备方法
董敬敬; 张兴旺; 尹志岗; 谭海仁; 高云; 张曙光; 白一鸣
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种制备图案化纳米模板的方法,包括以下步骤:步骤1:利用提拉法,在亲水性良好的平面衬底上组装PS球,得到单层有序的PS球薄膜;步骤2:利用氧等离子体刻蚀PS球,改变PS球的大小;步骤3:旋涂异丙醇稀释的TiO2溶胶,静置待TiO2溶胶固化,使TiO2溶胶填充PS球间隙;步骤4:甲苯中超声完全去除PS球,得到图案化的纳米模板。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN201010520234.0
Language中文
Status公开
Application NumberCN201010520234.0
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22181
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
董敬敬,张兴旺,尹志岗,等. 图案化纳米模板及其制备方法. CN201010520234.0.
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