SEMI OpenIR  > 中科院半导体照明研发中心
全侧壁锯齿状粗化发光二极管芯片的制备方法
闫发旺; 孙莉莉; 张会肖; 伊晓燕; 王军喜; 王国宏; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明涉及LED芯片技术领域,公开了一种全侧壁锯齿状粗化发光二极管芯片的制备方法。该方法基于传统LED工艺流程,在不增加任何工艺步骤的基础上,通过合理的版图设计,实现LED芯片全侧壁粗化。在不增加任何生产成本的前提下,能有效提高LED的发光效率。本发明可通过常规LED工艺流程予以实现:首先对GaN外延片进行台面刻蚀,形成侧壁锯齿状粗化的GaN台面和N型GaN沟槽,其中GaN台面包括P型GaN、量子阱和N型GaN,在P型GaN表面制备侧壁锯齿状粗化的透明导电薄膜,然后在导电薄膜上制备P型电极,在沟槽内制备N型电极。
metadata_83中科院半导体照明研发中心
Patent NumberCN201010113819.0
Language中文
Status公开
Application NumberCN201010113819.0
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22159
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
闫发旺,孙莉莉,张会肖,等. 全侧壁锯齿状粗化发光二极管芯片的制备方法. CN201010113819.0.
Files in This Item:
File Name/Size DocType Version Access License
CN201010113819.0.pdf(279KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[闫发旺]'s Articles
[孙莉莉]'s Articles
[张会肖]'s Articles
Baidu academic
Similar articles in Baidu academic
[闫发旺]'s Articles
[孙莉莉]'s Articles
[张会肖]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[闫发旺]'s Articles
[孙莉莉]'s Articles
[张会肖]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.