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高功率基横模平板耦合光波导半导体激光器结构
熊聪; 王俊; 崇锋; 刘素平; 马骁宇
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract一种高功率基横模平板耦合光波导半导体激光器结构,其中包括:一衬底,用于在其上生长激光器各外延层材料;一缓冲层,制作在衬底上;一N型下限制层,制作在缓冲层上;一下波导层,制作在N型下限制层上;一有源区,制作在下波导层上;一界面层,制作在有源区上;一P型上限制层,制作在界面层上;一过渡层,制作在P型上限制层上;一电极接触层,制作在过渡层上;一双沟,刻蚀在电极接触层上,刻蚀深度至下波导层以内,在双沟之间形成脊型台面;一钝化膜层,制作在电极接触层的上表面和双沟底部及两侧,所述脊型台面上的钝化膜层为断开的;一P面电极,制作在脊型台面上,与电极接触层接触;一N面电极,制作在衬底的下面。
metadata_83光电子器件国家工程中心
Patent NumberCN200910080071.6
Language中文
Status公开
Application NumberCN200910080071.6
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22111
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
熊聪,王俊,崇锋,等. 高功率基横模平板耦合光波导半导体激光器结构. CN200910080071.6.
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