SEMI OpenIR  > 半导体超晶格国家重点实验室
一种可实现自旋动态存储的器件
孙晓明; 郑厚植; 甘华东
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract本发明公开了一种可实现自旋动态存储的器件,该器件包括从下到上依次生长的衬底(10)、缓冲层(20)和微腔结构(30),且该微腔结构(30)包括从下到上依次生长的下反射镜(31)、有源区(32)和上反射镜(33),该有源区(32)是由交替生长的镓氮砷(321)和砷化镓(322)构成。本发明通过将室温下具有长弛豫时间的镓氮砷材料置入微腔中作为有源区,利用微腔具有的强耦合机制,有效放大镓氮砷材料中电子的弛豫时间,为实现自旋的动态存储以及量子计算机的实现打下坚实的基础。
metadata_83半导体超晶格国家重点实验室
Patent NumberCN200910237089.2
Language中文
Status公开
Application NumberCN200910237089.2
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21861
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
孙晓明,郑厚植,甘华东. 一种可实现自旋动态存储的器件. CN200910237089.2.
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