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Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy
Rao Lan; Song Guofeng; Chen Lianghui
2010
Source PublicationJournal of Semiconductors
Volume31Issue:10Pages:104007-1-104007-5
AbstractIn order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with nondestructive tests
metadata_83纳米光电子实验室
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:4041731
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21708
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Rao Lan,Song Guofeng,Chen Lianghui. Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy[J]. Journal of Semiconductors,2010,31(10):104007-1-104007-5.
APA Rao Lan,Song Guofeng,&Chen Lianghui.(2010).Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy.Journal of Semiconductors,31(10),104007-1-104007-5.
MLA Rao Lan,et al."Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy".Journal of Semiconductors 31.10(2010):104007-1-104007-5.
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