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246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制
颜廷静; 种明; 赵德刚; 张爽; 陈良惠
2011
Source Publication红外与激光工程
Volume40Issue:1Pages:32-35
Abstract设计并制备出短波长p-i-n型背照AlGaN太阳盲紫外探测器,响应波段为225~255 nm,峰值波长为246nm.材料为在蓝宝石衬底上生长的背照式p-i-n型异质结结构,n型窗口层的AlxGa1-xN中的Al组分为71%,非故意掺杂吸收层中的Al组分为52%.零偏压下测得的暗电流为27 pA,光电流为2.7 nA,峰值响应度为23 mA/W.并在此基础上制备出大面阵太阳盲紫外探测器芯片,其像元数为128×128,光敏元直径为44μm,像元间距为50μm
metadata_83纳米光电子实验室
Subject Area光电子学
Funding Organization国家自然科学基金资助项目,国家863计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4142236
Date Available2011-08-16
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21700
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
颜廷静,种明,赵德刚,等. 246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制[J]. 红外与激光工程,2011,40(1):32-35.
APA 颜廷静,种明,赵德刚,张爽,&陈良惠.(2011).246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制.红外与激光工程,40(1),32-35.
MLA 颜廷静,et al."246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制".红外与激光工程 40.1(2011):32-35.
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