| Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes | |
Ji Xiaoli ; Yang Fuhua; Wang Junxi; Duan Ruifei; Ding Kai; Zeng Yiping; Wang Guohong; Li Jinmin
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| 2010 | |
| Source Publication | Journal of Semiconductors
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| Volume | 31Issue:9Pages:94009-1-94009-4 |
| Abstract | Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QWI shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB 1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency |
| metadata_83 | 半导体集成技术工程研究中心 |
| Subject Area | 光电子学 |
| Funding Organization | National High Technology Research and Development Program of China,Knowl-edge Innovation Program of the Chinese Academy of Sciences |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3990325 |
| Date Available | 2011-08-16 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21684 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Ji Xiaoli,Yang Fuhua,Wang Junxi,et al. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. Journal of Semiconductors,2010,31(9):94009-1-94009-4. |
| APA | Ji Xiaoli.,Yang Fuhua.,Wang Junxi.,Duan Ruifei.,Ding Kai.,...&Li Jinmin.(2010).Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes.Journal of Semiconductors,31(9),94009-1-94009-4. |
| MLA | Ji Xiaoli,et al."Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes".Journal of Semiconductors 31.9(2010):94009-1-94009-4. |
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| Luminescence distrib（262KB） | 限制开放 | -- | Application Full Text | |||
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