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Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers
Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia
2010
Source PublicationJournal of Semiconductors
Volume31Issue:2Pages:99-102
AbstractTo harden silicon-on-insulator (SOI) wafers fabricated using separation by implanted oxygen (SIMOX) to total-dose irradiation, the technique of nitrogen implantation into the buried oxide (BOX) layer of SIMOX wafers can be used. However, in this work, it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities, which increased with increasing nitrogen implantation dose. Also, the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density.The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing. On the other hand, in our work, it has also been observed that, unlike nitrogen-implanted BOX, all the fluorine-implanted BOX layers show a negative charge density. To obtain the initial charge densities of the BOX layers, the tested samples were fabricated with a metal-BOX-silicon (MBS) structure based on SIMOX wafers for high-frequency capacitance-voltage (C-V) analysis.
metadata_83半导体集成技术工程研究中心
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:3868945
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21682
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Zheng Zhongshan,Liu Zhongli,Li Ning,et al. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. Journal of Semiconductors,2010,31(2):99-102.
APA Zheng Zhongshan,Liu Zhongli,Li Ning,Li Guohua,&Zhang Enxia.(2010).Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers.Journal of Semiconductors,31(2),99-102.
MLA Zheng Zhongshan,et al."Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers".Journal of Semiconductors 31.2(2010):99-102.
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