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An efficient dose-compensation method for proximity effect correction
Wang Ying; Han Weihua; Yang Xiang; Zhang Renping; Zhang Yang; Yang Fuhua
2010
Source PublicationJournal of Semiconductors
Volume31Issue:8Pages:86001-1-86001-4
AbstractA novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography. The sizes of exposed patterns depend on dose factors while other exposure parameters (including accelerate voltage, resist thickness, exposing step size, substrate material, and so on) remain constant. This method is based on two reasonable assumptions in the evaluation of the compensated dose factor: one is that the relation between dose factors and circle-diameters is linear in the range under consideration; the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity. Four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method. Compared to the uncorrected structures, the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved
metadata_83半导体集成技术工程研究中心
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China,National High Technology Research and Development Program of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3990313
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21680
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Wang Ying,Han Weihua,Yang Xiang,et al. An efficient dose-compensation method for proximity effect correction[J]. Journal of Semiconductors,2010,31(8):86001-1-86001-4.
APA Wang Ying,Han Weihua,Yang Xiang,Zhang Renping,Zhang Yang,&Yang Fuhua.(2010).An efficient dose-compensation method for proximity effect correction.Journal of Semiconductors,31(8),86001-1-86001-4.
MLA Wang Ying,et al."An efficient dose-compensation method for proximity effect correction".Journal of Semiconductors 31.8(2010):86001-1-86001-4.
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