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Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell
Deng Qingwen; Wang Xiaoliang; Xiao Hongling; Ma Zeyu; Zhang Xiaobin; Hou Qifeng; Li Jinmin; Wang Zhanguo
2010
Source PublicationJournal of Semiconductors
Volume31Issue:10Pages:103003-1-103003-5
AbstractA solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure (AMPS). The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer, intrinsic layer, n-type layer, and doping density. Results show that it is available and preferable in theory to employ a-SiC: H as a window layer in p-a-SiC: H/i-a-Si: H/n-μc-Si solar cells, and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells
metadata_83半导体材料科学中心
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of the Chinese Academy of Sciences,National Natural Science Foundation of China,State Key Development Program for Basic Research of China,Knowledge Innovation Program of the Chinese Academy of Sciences
Indexed ByCSCD
Language英语
CSCD IDCSCD:4041724
Date Available2011-08-16
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21668
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Deng Qingwen,Wang Xiaoliang,Xiao Hongling,et al. Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell[J]. Journal of Semiconductors,2010,31(10):103003-1-103003-5.
APA Deng Qingwen.,Wang Xiaoliang.,Xiao Hongling.,Ma Zeyu.,Zhang Xiaobin.,...&Wang Zhanguo.(2010).Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell.Journal of Semiconductors,31(10),103003-1-103003-5.
MLA Deng Qingwen,et al."Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell".Journal of Semiconductors 31.10(2010):103003-1-103003-5.
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